Test pattern layout for test photomask and method for evaluating critical dimension changes

ABSTRACT

Aspects of the present invention relate to a test photomask and a method for evaluating critical dimension changes in the test photomask. Various embodiments include a test photomask. The test photomask includes a plurality of cells having a varied density pattern. The plurality of cells include a first group of cells arranged along a first line, the first group of cells having a first combined density ratio. The plurality of cells also include a second group of cells arranged along a second line, the second group of cells having a second combined density ratio. In the plurality of cells, the second combined density ratio for the second group of cells is equal to the first combined density ratio of the first group of cells. The varied density pattern is configured to substantially neutralize fogging effects.

BACKGROUND

1. Technical Field

The disclosure is related generally to designing test pattern layouts toisolate an effect of interest when competing effects exist. Moreparticularly, the disclosure is related to the design of a test patternlayout for a test photomask, a test photomask and a method forevaluating and isolating critical dimension changes in the testphotomask.

2. Related Art

A semiconductor chip is built on a wafer using many layers of materialand many imaging steps to form the semiconductor devices. The materiallayers are often patterned with a specific layout or design that isfirst created on a photomask before being transferred to thesemiconductor wafer. The photomask contains the desired pattern to beprinted on a semiconductor wafer for a given layer of the design. It iscritical that all errors on the photomask be minimized to enable fullfunctionality of the semiconductor devices. The pattern is created inthe photomask translating the designer's intent into clear and opaqueregions in an absorbing layer of the photomask. The photomask patterningprocess is achieved, for example, by applying a photoresist and using anelectron beam to expose some regions. A subsequent develop of the resistcreates a soft mask for an etch to transfer the resist pattern into theabsorber layer. The resist is then stripped and the pattern qualityverified on the photomask.

When using pattern generators to write or print patterns on thephotomask, it is desirable to have good uniformity of the features ofinterest. The metric and terminology commonly applied to these featureson photomasks is critical dimension (CD) uniformity. Good CD uniformitymay substantially ensure that features in the photomask will result inthe pattern being transferred accurately when deployed as part of thewafer photolithography step. Effective transfer is important because thephotomask design is replicated thousands of times on wafers for thepurpose of building semiconductor structures.

During the photomask patterning process, a variety of errors can occur,which may inhibit CD uniformity. Two common errors that occur when usingan electron beam pattern generator to write patterns in semiconductorsare fogging effects and develop loading effects. These errors and thedegree/effect of the errors may depend upon a number of factors,including: electron beam condition, the configuration of the pattern onthe photomask, the materials of the photomask, the composition of thephotoresist exposed to the electron beam to create a removable mask ofthe pattern, the “developer” solvent used to remove exposed portions ofthe semiconductor structure, etc.

To compensate for these errors in photomask patterning, photomaskmanufacturers often create test photomasks and run test patterningprocesses to determine how the CD uniformity will be affected by errors.After running and analyzing the test photomask process, a finalphotomask may be created that may compensate for the anticipated errorsthat will occur when writing or printing the pattern on the finalsemiconductor structure. Additionally, to compensate for the detectederrors during the test photomask process, manufacturers may adjust ormodify pattern generator conditions used in writing or printing thepattern by: adjusting the exposure strength, adjusting the exposure beamconditions, etc.

The use of a test photomask and/or adjustments to the final photomaskmay not completely eliminate CD non-uniformity within the semiconductorstructure if the individual contributors to each error cannot beidentified and separated. That is, although the test photolithographyprocess may determine the error effects on CD uniformity on thephotomask, it may not be determined how much of an effect fogging has onthe CD uniformity, compared to the effects of develop loading effects.As such, the final photomasks are created to compensate for overalleffects with the aspirations of substantially minimizing errors and/ormaintaining CD uniformity during the photomask patterning process on allfeatures. However, without knowing the exact effect of each error (e.g.,fogging, develop loading, etch loading) on the photomask patterns, CDuniformity cannot be appropriately corrected.

BRIEF SUMMARY

A test photomask and a method for isolating contributors to criticaldimension errors in photomasks are disclosed. Various embodimentsinclude a test pattern layout and a test photomask including the layout.The test photomask may include: a plurality of cells having a varieddensity pattern, the plurality of cells including: a first group ofcells arranged along a first line, the first group of cells having afirst combined density ratio; and a second group of cells arranged alonga second line, the second group of cells having a second combineddensity ratio. The second combined density ratio for the second group ofcells is equal to the first combined density ratio of the first group ofcells.

A first aspect of the invention includes a test pattern layout for atest photomask, the test pattern layout comprising: a plurality of cellshaving a varied density pattern, the plurality of cells including: afirst group of cells arranged along a first line, the first group ofcells having a first combined density ratio; and a second group of cellsarranged along a second line, the second group of cells having a secondcombined density ratio, wherein the second combined density ratio forthe second group of cells is equal to the first combined density ratioof the first group of cells.

A second aspect of the invention includes a test photomask comprising: avaried density pattern configured spatially to substantially neutralizefogging effects within a photomask.

A third aspect of the invention includes a method for evaluatingcritical dimensions in a test photomask, the method comprising:fabricating a test photomask using an electron beam to write a testpattern layout configured to substantially neutralize a fogging effect,the test pattern layout including a plurality of cells having a varieddensity pattern, wherein the plurality of cells includes: a first groupof cells arranged along a first line, the first group of cells having afirst combined density ratio; and a second group of cells arranged alonga second line, the second group of cells having a second combineddensity ratio, wherein the second combined density ratio for the secondgroup of cells is equal to the first combined density ratio of the firstgroup of cells; and evaluating a critical dimension of the test patternlayout on the test photomask to identify an error attributed to aneffect other than the fogging effect.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other features of this invention will be more readilyunderstood from the following detailed description of the variousaspects of the invention taken in conjunction with the accompanyingdrawings that depict various embodiments of the invention, in which:

FIG. 1 shows a plane view of a test photomask including a plurality ofcells having a varied density pattern, according to various embodimentsof the invention.

FIGS. 2-4 each show enlarged plane views of a portion of a testphotomask in FIG. 1 including a plurality of cells having a varieddensity pattern, according to embodiments of the invention.

FIGS. 5-8 show a method of evaluating and fabrication a test photomaskaccording to embodiments of the invention.

It is noted that the drawings of the invention are not necessarily toscale. The drawings are intended to depict only typical aspects of theinvention, and therefore should not be considered as limiting the scopeof the invention. In the drawings, like numbering represents likeelements between the drawings.

DETAILED DESCRIPTION

As described herein, aspects of the invention relate to a test patternlayout for a test photomask, a test photomask and a method forevaluating critical dimension changes in the test photomask.Specifically, as described herein, aspect of the invention are relatedto a test photomask including a plurality of cells having a varieddensity pattern.

Turning to FIG. 1, a plane view of a test photomask including aplurality of cells having a varied density pattern according to variousembodiments is shown. More specifically, as shown in FIG. 1, a testphotomask 100 includes a transparent substrate layer 102 and a patternlayer 104 on transparent layer 102. Substrate layer 102 of testphotomask 100 may include any material having desirable properties,including, but not limited to: glass, quartz, or silicon dioxide. Thatis, substrate layer 102 may include any substantially rigid materialthat supports the pattern and has appropriate optical properties for theapplication.

Test photomask 100, as shown in FIG. 1, may include a test patternlayout 105, i.e., in pattern layer 104, including a plurality of cells106 having a varied density pattern 108. That is, test pattern layout105 may include the plurality of cells 106 which form varied densitypattern 108 throughout the entire pattern layer 104, such that testphotomask 100 does not include a uniform density throughout patternlayer 104. As discussed herein, each of the plurality of cells 106 oftest pattern layout 105 may include a density ratio DR_(n)% (FIGS. 2-4).Density ratio DR_(n)% for each of the plurality of cells 106 formingvaried density pattern 108 may be related to the degree of transparencyof each cell 106. That is, density ratio DR_(n)% for each of theplurality of cells 106 may correspond to a test pattern formed in eachcell, where the test pattern of each cell 106 includes a ratio ofdensity. For example, where a cell 106 includes density ratio DR_(n)% of90%, the test pattern may be substantially minimal or small, such thatcell 106 may have a substantially dense pattern filling the majority ofcell 106. Conversely, where a cell 106 includes density ratio DR_(n)% of10%, cell 106 may include a sparse pattern.

As shown in FIG. 1, pattern layer 104 of test photomask may include anymaterial that may allow varied density pattern 108 to be formed withinpattern layer 104. More specifically, pattern layer 104 may be made outof any optically appropriate material, e.g., chrome, which may includethe plurality of cells 106 having varied density ratios DR_(n)%. Asunderstood in the art, various other layers may also be provided, e.g.,an anti-reflective coating, etc. As discussed herein, the plurality ofcells 106 forming varied density pattern 108 of test pattern layout 105may be configured to substantially neutralize effects on one lengthscale, for example, electron beam fogging effects created bybackscattered electrons during the mask patterning process.“Substantially neutralize” indicates sufficient elimination of thefogging effect such that any errors in test pattern layout 105 can beattributed to another effect. In this fashion, a critical dimension ofthe test pattern layout on the test photomask can be evaluated toidentify an error attributed to an effect other than the fogging effect.The other effect can take a variety of forms. One particular effect,however, includes a develop loading effect. Other effects may include,but are not limited to, signatures resulting from: resist apply, resistbake, etch loading, etc.

Turning to FIGS. 2-4, an enlarged plane view of a portion of testphotomask 100 in FIG. 1 is shown including the plurality of cells 106having varied density pattern 108, according to various embodiments ofthe invention. For ease of reference, the portion of test pattern layout105 of test photomask 100 shown has been provided with column lettering(e.g., A-D) and row numbering (e.g., I-IV). As such, each of theplurality of cells 106 may be identified by a single column letter(e.g., A-D) and a single row number (e.g., I-IV). For example, a firstcell A-I of the plurality of cells 106 may be located at the top leftcorner of test pattern layout 105 in test photomask 100.

As shown in FIGS. 2-4, varied density pattern 108 formed by theplurality of cells 106 of test pattern layout 105 may be substantiallyrepetitive in pattern layer 104. More specifically, a cell group 110 ofa predetermined number of the plurality of cells 106, each havingdistinct density ratios DR_(n)%, may be substantially repeated to formvaried density pattern 108 in pattern layer 104 of test photomask 100.For example, as shown in FIGS. 2-4, cell group 110 may consist of athree (3) by three (3) group of cells of the plurality of cells 106,where each of the plurality of cells 106 in cell group 110 includedistinct density ratios DR_(1.9)%. More specifically, as shown in FIGS.2-4, density ratio DR₁% of first cell A-I may be distinct from thedensity ratios DR_(n)% (e.g., DR₂%, DR₄%, DR₅%) of each adjacent cell tofirst cell A-I (e.g., cells A-II, B-I, B-II) of the plurality of cells106 included in cell group 110. Additionally, density ratio DR₁% offirst cell A-I may be distinct from the density ratios DR_(n)% (e.g.,DR₃%, DR₆₋₉%) of each additional cell (e.g., cells A-III, B-III,C-I-III) of the plurality of cells 106 included in cell group 110.

Additionally, as shown in FIGS. 2-4, and discussed herein, each of theplurality of cells 106 may include density ratio DR_(n)% equal to adistinct cell positioned a predetermined number of cells away from thecell. The predetermined number of cells separating two distinct cells ofthe plurality of cells 106 having equal density ratio DR_(n)% may bedependent upon the dimension of cell group 110. More specifically, thenumber of cells included in cell group 110 may determine thepredetermined number of cells that separates two distinct cells of theplurality of cells 106 that may include equal density ratios DR_(n)%.The separation between the two distinct cells of the plurality of cells106 may be separated the predetermined number of cells in a straightline. More specifically, the two distinct cells having equal densityratios DR_(n)% may be separated the predetermined number of cells alonga straight line within the same column (e.g., A-D), the same row (e.g.,I-IV), or in a straight diagonal line (e.g., A-I to D-IV).

For example, as shown in FIGS. 2-4, cell group 110 may include a three(3) by three (3) groups of cells of the plurality of cells 106. As aresult, the predetermined number of cells positioned away from twodistinct cells 106 having equal density ratios DR_(n)% may be three (3).More specifically, as shown in FIGS. 2-4, cell A-I and cell D-I may bepositioned three cells apart, and may include equal density ratios DR₁%.That is, using cell A-I as a reference point, cell D-I is positionedthree cells away from cell A-I in row I, and as a result of cell group110 being a three (3) by three (3) group of cells, density ratios DR₁%of cell A-I may be equal to density ratios DR₁% of cell D-I.Additionally, as shown in FIGS. 2-4, cell A-I may include density ratiosDR₁% equal to density ratios DR_(n)% or other cells of the plurality ofcells 106 positioned the predetermined number (e.g., three) of cellsaway. That is, density ratios DR₁% of cell A-I may be equal to densityratios DR₁% of cell A-IV, and also density ratios DR₁% of cell D-IV.

Although cell group 110 is shown and discussed herein as a three (3) bythree (3) group of cells 106, it is understood that cell group 110 mayinclude any dimension of cells. That is, cell group 110 may include aplurality of distinct groups of cells of the plurality of cells 106 oftest pattern layout 105 in pattern layer 104 to from cell group 110.Additionally, it is understood that, the predetermined number of cellsseparating distinct cells of the plurality of cells 106 including equaldensity ratios DR_(n)%, may be directly dependent upon the celldimensions of cell group 110. As such, as the cell dimension of cellgroup 110 increases/decreases, the predetermined number of cellsseparating distinct cells having equal density ratios DR_(n)%increases/decreases accordingly.

As a result of each adjacent cell of the plurality of cells 106 havingdistinct density ratios DR_(n)%, and distinct cells separated by apredetermined number of cells including equal density ratios DR_(n)%, arelationship of density ratios DR_(n)% for the plurality of cells 106may be established in varied density pattern 108. That relationship ofdensity ratios DR_(n)% may now be described. As shown in FIG. 2, theplurality of cells 106 having varied density pattern 108 may include afirst group of cells A-I, B-I, C-I arranged along a first line L1 havinga first combined density ratio (e.g., DR₁%+DR₂%+DR₃%). Additionally, asshown in FIG. 2, the plurality of cells 106 may include a second groupof cells A-I, A-II, A-III arranged along a second line L2 having asecond combined density ratio (e.g., DR₁%+DR₄%+DR₇%). The relationshipbetween first group of cells A-I, B-I, C-I and second group of cellsA-I, A-II, A-III may be that first combined density ratio (e.g.,DR₁%+DR₂%+DR₃%) of first group of cells A-I, B-I, C-I is equal to secondcombined density ratio (e.g., DR₁%+DR₄%+DR₇%) of second group of cellsA-I, A-II, A-III. That is, the combined density ratio ΣDR_(n)% of thecells positioned along first line L1 is equal to the combined densityratio ΣDR_(n)% of the cells positioned along second line L2. As shown inFIG. 2, for the relationship between the groups of cells 106 to bepresent, the number of cells in first group of cells A-I, B-I, C-I maybe equal to the number of cells in second group of cells A-I, A-II,A-III. That is, as shown in FIG. 2, the number of cells in first groupof cells A-I, B-I, C-I may be three (3) and the number of cells insecond group of cells A-I, A-II, A-III may also be three. Additionally,as shown in FIG. 2, first group of cells A-I, B-I, C-I arranged alongfirst line L1 may include at least one cell (e.g., A-I) included insecond group of cells A-I, A-II, A-III arranged along second line L2.

For example, with reference to FIG. 2, first group of cells A-I, B-I,C-I arranged along first line L1 include density ratios DR₁%, DR₂%,DR₃%, respectively. In the example, density ratios DR₁% for cell A-I maybe 80%, density ratios DR₂% for cell B-I may be 10%, and density ratiosDR₃% for cell C-I may be 60%. As a result, the combined density ratiofor first group of cells A-I, B-I, C-I arranged along first line L1 maybe 150% (i.e., DR₁%+DR₂%+DR₃%=80%+10%+60%=150%). As discussed herein,for the relationship between first group of cells A-I, B-I, C-I arrangedalong first line L1 and second group of cells A-I, A-II, A-III arrangedalong second line L2 to be present, the combined density ratio forsecond group of cells A-I, A-II, A-III must also be 150%. Additionally,as discussed herein, adjacent cells of the plurality of cells 106 maynot include equal density ratios DR_(n)%, and each cell included in cellgroup 110 may include distinct density ratios DR_(n)%. As a result, andin accordance with the example, test pattern layout 105 in pattern layer104 including the plurality of cells 106 may be manufactured such that,density ratios DR₁% for cell A-I may be 80%, density ratios DR₄% forcell A-II may be 30%, and density ratios DR₇% for cell A-III may be 40%.In the example, all cells included in first group of cells A-I, B-I,C-I, and second group of cells A-I, A-II, A-III include distinct densityratios DR_(n)%. As a result, in the example, the combined density ratiofor second group of cells A-I, A-II, A-III arranged along second line L2may be 150% (i.e., DR₁%+DR₄%+DR₇%=80%+30%+40%=150%).

Continuing the example, and with reference to FIG. 2, a third group ofcells A-I, B-II, C-III arranged along a third line L3 may also include acombined density ratio (e.g., DR₁%+DR₅%+DR₉%) equal to the combineddensity ratios of first group of cells A-I, B-I, C-I arranged alongfirst line L1 and/or second group of cells A-I, A-II, A-III arrangedalong second line L2 (e.g., 150%). More specifically, density ratiosDR₁% for cell A-I may be 80%, density ratios DR₅% for cell B-II may be50%, and density ratios DR₉% for cell C-III may be 20%. Continuing theexample, the combined density ratio for third group of cells A-I, B-II,C-III arranged along third line L3 may be 150% (i.e.,DR₁%+DR₅%+DR₉%=80%+50%+20%=150%).

Turning to FIG. 3, an additional embodiment of pattern layer 106 of testphotomask 100 (FIG. 1) is shown according to embodiments of theinvention. As shown in FIG. 3, first group of cells A-I, B-I, C-Iarranged along first line L1 may include zero cells included in adistinct group of cells arranged along a distinct line. That is, asshown in FIG. 3, first group of cells A-I, B-I, C-I may not include anysimilar cells included in a distinct group of cells, as discussedherein. First group of cells A-I, B-I, C-I arranged along first line L1may be substantially similar to first group of cells A-I, B-I, C-Iarranged along first line L1 in FIG. 2. FIG. 3 also shows a distinctgroup of cells or a fourth group of cells A-II, B-II, C-II arrangedalong a fourth line L4 having a combined density ratio (e.g.,DR₄%+DR₅%+DR₆%). As discussed above, fourth group of cells A-II, B-II,C-II arranged along a fourth line L4 may include the same number ofcells as first group of cells A-I, B-I, C-I arranged along first lineL1, wherein each cell included in both fourth group of cells A-II, B-II,C-II and first group of cells A-I, B-I, C-I include distinct densityratios DR_(n)%. Continuing the example from FIG. 2, in order for therelationship of density ratios DR_(n)% for the plurality of cells 106 tobe present, combined density ratio (e.g., DR₄%+DR₅%+DR₆%) of fourthgroup of cells A-II, B-II, C-II arranged along a fourth line L4 mayequal combined density ratio (e.g., DR₁%+DR₂%+DR₃%) of first group ofcells A-I, B-I, C-I (e.g., 150%). As a result, and in accordance withthe example, test pattern layout 105 including the plurality of cells106 may be manufactured such that, density ratios DR₄% for cell A-II maybe 30%, density ratios DR₅% for cell B-II may be 50%, and density ratiosDR₆% for cell C-II may be 70%. In the example, the combined densityratio for fourth group of cells A-II, B-II, C-II arranged along fourthline L4 may be 150% (i.e., DR₄%+DR₅%+DR₆%=30%+50%+70%=150%).

Additionally, as shown in FIG. 3, a similar relationship between a fifthgroup of cells A-III, B-III, C-III arranged along a fifth line L5 may bepresent. That is, as shown in FIG. 3, a combined density ratio (e.g.,DR₇%+DR₈%+DR₉%) for fifth group of cells A-III, B-III, C-III arrangedalong a fifth line L5 may be equal to the combined density ratios offirst group of cells A-I, B-I, C-I arranged along first line L1 and/orfourth group of cells A-II, B-II, C-II arranged along fourth line L4(e.g., 150%). More specifically, density ratios DR₇% for cell A-III maybe 40%, density ratios DR₈% for cell B-III may be 90%, and densityratios DR₉% for cell C-III may be 20%. Continuing the example, thecombined density ratio for fifth group of cells A-III, B-III, C-IIIarranged along fifth line L5 may also be 150% (i.e.,DR₇%+DR₈%+DR₉%=40%+90%+20%=150%).

Turning to FIG. 4, a further embodiment of pattern layer 106 of testphotomask 100 (FIG. 1) is shown according to embodiments of theinvention. As shown in FIG. 4, first group of cells A-I, B-I, C-Iarranged along first line L1 may include a plurality of cells includedin a distinct group of cells arrange along a distinct line. Morespecifically, as shown in FIG. 4, first group of cells A-I, B-I, C-Iarranged along first line L1 may include a plurality of cells alsoincluded in a sixth group of cells B-I, C-I, D-I arranged along a sixthline L6. As shown in FIG. 4, sixth group of cells B-I, C-I, D-I arrangedalong a sixth line L6 also has a combined density ratio (e.g.,DR₂%+DR₃%+DR₁%). Sixth group of cells B-I, C-I, D-I arranged along sixthline L6 may include the same number of cells as first group of cellsA-I, B-I, C-I arranged along first line L1. Also, as shown in FIG. 4,sixth group of cells B-I, C-I, D-I may share two common cells (e.g.,B-I, C-I) with first group of cells A-I, B-I, C-I. As discussed above,cell group 110 may be repeated to form varied density pattern 108 oftest pattern layout 105. That is, and as discussed above, the three (3)by three (3) group of cells of the plurality of cells 106 forming cellgroup 110 may be repeated to form the various (partially shown) cellgroups 110 a, 110 b, 110 c which may collectively form varied densitypattern 108 of test pattern layout 105 in pattern layer 104.

Continuing the examples of FIGS. 2 and 3, the relationship of densityratios DR_(n)% for the plurality of cells 106 may be present where theidentified group of cells (e.g., first group of cells A-I, B-I, C-I,sixth group of cells B-I, C-I, D-I) may not be contained in the samecell group 110. That is, as shown in FIG. 4, combined density ratio forfirst group of cells A-I, B-I, C-I arranged along first line L1 may alsobe 150% (e.g., DR₁%+DR₂%+DR₃%=80%+10%+60%=150%). In continuing therelationship, and based upon the repetitive varied density pattern 108formed in pattern layer 104, combined density ratio for sixth group ofcells B-I, C-I, D-I arranged along sixth line L6 may be 150% (e.g.,DR₂%+DR₃%+DR₁%=10%+60%+80%=150%). That is, first group of cells A-I,B-I, C-I and sixth group of cells B-I, C-I, D-I include a plurality ofcommon cells (e.g., B-I, C-I). Additionally, and as discussed above,cell D-I is positioned a predetermined number (e.g., three (3)) cellsaway from cell A-I. As a result, cells A-I and D-I include equal densityratios DR₁%. As such, the relationship between two distinct groups ofcells of the plurality of cells 106 may be present where at least onecell a group of cells (e.g., sixth group of cells B-I, C-I, D-I) is notincluded in the same cell group 110 as a distinct group of cells (e.g.,first group of cells A-I, B-I, C-I).

Various additional embodiments of the invention can include a method forevaluating critical dimensions (CD) in a test photomask 100. One methodof evaluating critical dimension in test photomask 100 may now bedescribed. Turning to FIGS. 5-8, one illustrative method according tovarious embodiments is shown. In particular, the method may includefabricating a test photomask 100 (FIG. 8) using an electron beam 150(FIG. 5) to write test pattern layout 105 (FIG. 5) configured tosubstantially neutralize a fogging effect. As described herein, testpattern layout 105 includes a plurality of cells 106 (FIGS. 2-4) havingvaried density pattern 108 (FIG. 1). Plurality of cells 106 may includea first group of cells arranged along a first line, the first group ofcells having a first combined density ratio; and a second group of cellsarranged along a second line, the second group of cells having a secondcombined density ratio, wherein the second combined density ratio forthe second group of cells is equal to the first combined density ratioof the first group of cells.

The fabrication may use any now known or later developed techniques. Forexample, as shown in FIG. 5, a transparent substrate layer 102 has apattern layer 104 thereon. Substrate layer 102 of test photomask 100 mayinclude any material having desirable properties, including, but notlimited to: glass, quartz, or silicon dioxide. That is, substrate layer102 may include any substantially rigid material that supports thepattern and has appropriate optical properties for the application.Pattern layer 104 may include any appropriate photomask material, suchas chrome. An appropriate photoresist layer 160 is formed over patternlayer 104. As illustrated, an electron beam 150 writes test patternlayout 105 into photoresist layer 160, indicated by the different shadedparts of photoresist layer 160. That is, test pattern layout 105 isexposed to electron beam 150. As discussed herein, backscatter electronscause fogging. As the electrons are reflected back from the testphotomask, they are also reflected back to towards the test photomask,but the area covered is enlarged. The goal of the test pattern layout isto make the fogging uniform so the critical dimension uniformity issuefrom other effects can be seen. The variation of the test pattern layoutdensity being less than the overall fogging radius allows thisneutralization of the fogging effect to occur. That is, test patternlayout varies density fast enough that the extent of the fogging islarger than the density variation, while simultaneously maintaining thedensity in the extent of fogging the same. By then looking at thecritical dimension change as a function of density, one can see arelationship between density and critical dimension change for othereffects. In FIG. 6, photoresist layer 160 is developed, and in FIG. 7,photoresist layer 160 is etched to form test pattern layout 105 inpattern layer 104. FIG. 8 shows test photomask 100 including testpattern layout 105, i.e., in pattern layer 104, including a plurality ofcells 106 having a varied density pattern 108. That is, test patternlayout 105 may include the plurality of cells 106 which form varieddensity pattern 108 throughout the entire pattern layer 104, such thattest photomask 100 does not include a uniform density throughout patternlayer 104.

FIG. 8 also shows a step of evaluating a critical dimension (CD) of testpattern layout 105 on test photomask 100 to identify an error attributedto an effect other than the fogging effect. As described herein, theevaluating may include exposing test pattern layout 106 within theplurality of cells to electron beam 160 such that the test patternlayout substantially neutralizes the fogging effect within the testphotomask during the exposing. As indicated above, errors attributableto fogging effects are substantially neutralized by test pattern layout105. Consequently, an effect other than the fogging effect can bereadily identified, e.g., a develop loading effect, using conventionaltechniques. As indicated, the critical dimension(s) (CD) evaluated toidentify an error can take any form, e.g., a structure width such as CD1or CD2, spacing between structures such as CD3. The evaluation may becarried out using any now known or later developed technique formeasuring critical dimensions such as conventional measurements using ascanning electron microscope. In this fashion, the evaluating of the CDof test pattern layout 105 may include determining non-uniformity in theCD, e.g., across pattern layer 104. The evaluation may includedetermining whether the effect other than the fogging effect is withinof an acceptable range for the effect other than the fogging effect. Forexample, whether a develop loading effect error is within an acceptablerange. Furthermore, in response to the effect not being within theacceptable range, modifying a mask patterning condition, e.g., operatingparameter of electron beam 150, etc., during fabricating of a non-testpattern photomask to correct for the error.

Additionally, it is understood that the above outlines a general methodfor designing a test photomask so that the configuration of patterndensities enables the substantial neutralization of one length scale sothat a different effect possessing a different length scale can beisolated and quantified. More specifically, by substantiallyneutralizing the fogging effects of an electron beam patterning process,other effects such as the develop loading effect on test photomaskpattern 100, can be quantified.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the disclosure.As used herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

This written description uses examples to disclose the invention,including the best mode, and also to enable any person skilled in theart to practice the invention, including making and using any devices orsystems and performing any incorporated methods. The patentable scope ofthe invention is defined by the claims, and may include other examplesthat occur to those skilled in the art. Such other examples are intendedto be within the scope of the claims if they have structural elementsthat do not differ from the literal language of the claims, or if theyinclude equivalent structural elements with insubstantial differencesfrom the literal languages of the claims.

What is claimed is:
 1. A method for evaluating critical dimensions in atest photomask, the method comprising: fabricating a test photomaskusing an electron beam to write a test pattern layout configured tosubstantially neutralize a fogging effect, the test pattern layoutincluding a plurality of cells having a varied density pattern, whereinthe plurality of cells includes: a first group of cells arranged along afirst line, the first group of cells having a first combined densityratio; and a second group of cells arranged along a second line, thesecond group of cells having a second combined density ratio, whereinthe second combined density ratio for the second group of cells is equalto the first combined density ratio of the first group of cells; andevaluating a critical dimension of the test pattern layout on the testphotomask to identify an error attributed to an effect other than thefogging effect.
 2. The method of claim 1, wherein the evaluating of thecritical dimension of the test pattern layout includes determiningnon-uniformity in the critical dimension.
 3. The method of claim 1,wherein the evaluating includes exposing the test pattern layout withinthe plurality of cells to an electron beam such that the test patternlayout substantially neutralizes the fogging effect within the testphotomask during the exposing.
 4. The method of claim 1, wherein theevaluating includes determining whether the effect other than thefogging effect is within of an acceptable range for the effect otherthan the fogging effect; and in response to the effect not being withinthe acceptable range, modifying a mask patterning condition duringfabricating of a non-test pattern photomask to correct for the error. 5.The method of claim 1, wherein the effect other than the fogging effectincludes a develop loading effect.